2sa1339 / 2sc3393 no.1392-1/5 features ? ultrasmall-sized package permitting sets to be smallsized,slim. ? high breakdown voltage : v ceo =(C)50v. ? complementary pair transistor having large current capacity and high ft. ? adoption of fbet process. specifications ( ) : 2sa1339 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)60 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)5 v collector current i c (--)500 ma collector current (pulse) i cp (--)800 ma collector dissipation p c 300 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)40v, i e =0a (--)0.1 m a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)0.1 m a dc current gain h fe v ce =(--)5v, i c =(--)10ma 140* 400* gain-bandwidth product f t v ce =(--)10v, i c =(--)50ma (200)300 mhz output capacitance cob v cb =(--)10v, f=1mhz (5.6)3.7 pf * ; the 2sa1339 / 2sc3393 are classified by 10ma h fe as follws: continued on next page. rank s t h fe 140 to 280 200 to 400 ordering number : en1392c 70306 / 42806ea ms im tb-00002260 / 83002tn (kt) / 71598ha (kt) / 3197ki /1114ki, mt 2sa1339 / 2sc3393 pnp / npn epitaxial planar silicon transistors high-speed switching applications sanyo semiconductors data sheet tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein.
2sa1339 / 2sc3393 no.1392-2/5 continued from preceding page. ratings parameter symbol conditions min typ max unit collector-to-emitter saturation voltage v ce (sat) i c =(--)100ma, i b =(--)10ma (--0.15)0.1 (--0.4)0.3 v base-to-emitterr saturation voltage v be (sat) i c =(--)100ma, i b =(--)10ma (--)0.8 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 m a, i e =0a (--)60 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)100 m a, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 m a, i c = (--)5 v turn-on time t on v cc =20v, i c =10i b1 =--10i b2 =100ma 70 ns storage time t stg v cc =20v, i c =10i b1 =--10i b2 =100ma 400 ns fall time t f v cc =20v, i c =10i b1 =--10i b2 =100ma (50)70 ns package dimensions switching time test circuit unit : mm 7524-004 123 4.0 3.8 3.0 2.2 0.7 0.7 0.6 0.4 0.4 0.4 0.5 3.0 1.8 15.0 1.3 1.3 1 : emitter 2 : collector 3 : base sanyo : spa pw=10 m s d.c. 1% input v cc =20v 50 w r b 200 w i b1 i b2 100 m f 470 m f --5v v r + + r l out for pnp, the polarity is reversed. i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- ma collector-to-emitter voltage, v ce -- v collector current, i c -- ma itr03246 0 -- 0.2 -- 0.4 -- 0.6 -- 0.8 -- 1.0 0 -- 20 -- 40 -- 60 -- 80 -- 100 i b =0 m a itr03247 1.0 0.6 0.8 0.2 0.4 0 0 20 40 60 80 100 --600 m a --700 m a 2sa1339 i b =0 m a 700 m a 600 m a 2sc3393 --500 m a --400 m a --300 m a --200 m a --100 m a 500 m a 400 m a 300 m a 200 m a 100 m a
2sa1339 / 2sc3393 no.1392-3/5 h fe -- i c h fe -- i c i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma collector current, i c -- ma dc current gain, h fe collector current, i c -- ma dc current gain, h fe i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- ma collector-to-emitter voltage, v ce -- v collector current, i c -- ma f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- mhz f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- mhz -- 1.0 23 3 57 -- 10 7 -- 100 5 237 -- 1000 5 2 7 100 7 1000 10 5 7 5 5 3 2 3 2 itr03254 2sa1339 v ce = -- 10v 1.0 23 3 57 10 7 100 5 237 1000 5 2 7 100 7 1000 10 5 7 5 5 3 2 3 2 itr03255 2sc3393 v ce =10v 1000 100 itr03252 2 3 57 7 3 25 3 5 2 -- 1.0 -- 10 7 -- 100 -- 1000 2 3 5 7 2 2 3 5 7 1.0 10 23 3 57 7 7 23 5 100 1000 5 2 7 100 5 7 1000 5 3 2 2 3 2 itr03253 2sa1339 v ce = --5v 2sc3393 v ce =5v itr03250 0 -- 0.2 -- 0.4 -- 0.6 -- 0.8 -- 1.0 0 -- 20 -- 40 -- 60 -- 80 -- 100 -- 120 itr03251 1.0 0.6 0.8 0.2 0.4 0 0 20 40 60 80 100 120 2sa1339 v ce = --5v 2sc3393 v ce =5v ta=75 c 25 c --25 c ta=75 c 25 c --25 c ta=75 c 25 c --25 c ta=75 c 25 c --25 c itr03248 0 -- 10 -- 20 -- 30 -- 40 -- 50 0 -- 8 -- 4 -- 12 -- 16 -- 20 i b =0 m a itr03249 30 40 50 20 10 0 0 4 8 12 16 20 2sa1339 i b =0 m a 60 m a 2sc3393 --60 m a --50 m a --40 m a --30 m a --20 m a --10 m a 50 m a 40 m a 30 m a 20 m a 10 m a
2sa1339 / 2sc3393 no.1392-4/5 v ce (sat), v be (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v v ce (sat), v be (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v a s o p c -- ta collector-to-emitter voltage, v ce -- v collector current, i c -- ma ambient temperature, ta -- c collector dissipation, p c -- mw cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf sw time -- i c collector current, i c -- ma switching time, sw time -- m s sw time -- i c collector current, i c -- ma switching time, sw time -- m s 0 20 40 60 80 100 120 140 160 0 100 300 200 400 itr03263 itr03260 5 77 -- 10 2 23 357 -- 100 0.01 0.1 7 7 1.0 5 3 5 3 2 2 2 2sa1339 v cc =20v i c =10i b1 = --10 i b2 itr03261 itr03258 5 5 -- 10 2 -- 1.0 23 35 -- 100 23 5 -- 1000 -- 0.1 -- 0.01 -- 1.0 5 3 5 3 2 -- 10 5 3 2 2 2sa1339 i c / i b = 10 itr03259 5 5 10 2 1.0 23 35 100 23 5 1000 0.1 0.01 3 1.0 5 3 5 2 2 10 5 3 2 2sc3393 i c / i b = 10 t f t r t d 5 77 10 2 23 357 100 0.01 0.1 7 7 1.0 5 3 5 3 2 2 2 2sc3393 v cc =20v i c =10i b1 = --10 i b2 t stg t f t r t d itr03262 dc operation 10ms 1ms 100ms 1.0 10 3 5 7 2 3 5 3 5 2 3 357 57 100 7 2 35 10 7 7 2 100 1000 i c =500ma i cp =800ma v be (sat) v ce (sat) v be (sat) v ce (sat) t stg 7 -- 10 23 -- 1.0 23 5 5 1.0 7 10 5 3 2 2 itr03256 2sa1339 f= 1mhz 2sc3393 f= 1mhz 7 10 23 1.0 23 5 5 1.0 7 10 5 3 2 2 itr03257 for pnp minus sign is omitted.
2sa1339 / 2sc3393 no.1392-5/5 ps specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of april, 2006. specifications and information herein are subject to change without notice.
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